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| Preliminary TSC5304D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 4A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A Features Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though comer spirit product. Low base drive requirement. Suitable for half bridge light ballast applications. Ordering Information Part No. TSC5304DCH TSC5304DCP Packing Tube T&R Package TO-251 TO-252 Block Diagram Structure Silicon triple diffused type. NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Total Power Dissipation (Tc=25 C) Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty <= 2% o Symbol VCBO VCEO VEBO IC Limit 750V 400V 10 4 8 Unit V V V A IB 1.5 4 A PD TJ TSTG Rjc Rja 35 +150 - 65 to +150 6 90 o o W o o C C C/W C/W TS5304D Preliminary 1-1 2004/09 rev. A Preliminary Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 5mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 9V, IC = 0 IC / IB = 1.0A / 0.2A IC / IB = 2.0A / 0.5A IC / IB = 4.0A / 1.0A Base-Emitter Saturation Voltage IC / IB = 1.0A / 0.2A IC / IB = 2.0A / 0.5A DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 2A Turn On Time Storage Time Fall Time Doide Fall Time Forward Voltage IC = 2A IC = 2A VCC = 250V, IC = 2A, IB1 = IB2 = 0.4A, tp= 25uS Duty cycle < 1% BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VCB(SAT)1 VCB(SAT)2 hFE 1 hFE 2 750 400 9 -------15 10 -------------20 -------10 10 0.35 0.55 1.25 1.0 1.1 --0.5 3 0.2 uS uS uS V V V V uA uA V Conditions Symbol Min Typ Max Unit tON tSTG tF tF Vf --- --- 500 1.3 nS V Note : pulse test: pulse width <=300uS, duty cycle <=2% TS5304D Preliminary 2-2 2004/09 rev. A Preliminary TO-252 Mechanical Drawing J A E F DIM A B C D E F G H I J TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 1.580 0.057 0.062 0.520 5.340 1.460 0.570 5.550 1.640 0.020 0.210 0.057 0.022 0.219 0.065 I B G D C H TO-251 Mechanical Drawing DIM A A1 b C D D1 E e F L L1 TO-251 DIMENSION MILLIMETERS INCHES MIN 2.20 1.10 0.40 0.40 6.70 5.40 6.40 2.10 0.40 7.00 1.60 MAX 2.4 1.30 0.80 0.60 7.30 5.65 6.65 2.50 0.60 8.00 1.86 MIN 0.087 0.043 0.016 0.016 0.264 0.213 0.252 0.083 0.016 0.276 0.063 MAX 0.095 0.051 0.032 0.024 0.287 0.222 0.262 0.098 0.024 0.315 0.073 TS5304D Preliminary 3-3 2004/09 rev. A |
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